The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Aug. 04, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Barry Jon Male, West Granby, CT (US);

Rajarshi Mukhopadhyay, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01F 17/00 (2006.01); H01F 27/24 (2006.01); H01F 27/28 (2006.01); H01F 41/04 (2006.01); H01L 23/495 (2006.01); H01L 23/522 (2006.01); H01L 23/66 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/645 (2013.01); H01F 17/0006 (2013.01); H01F 17/0013 (2013.01); H01F 27/24 (2013.01); H01F 27/2804 (2013.01); H01F 41/046 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 23/66 (2013.01); H01L 28/10 (2013.01); H01F 2017/0073 (2013.01); H01F 2017/0086 (2013.01); H01F 2027/2809 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73265 (2013.01);
Abstract

In a described example, an integrated circuit includes: a semiconductor substrate having a first surface and an opposite second surface; at least one dielectric layer overlying the first surface of the semiconductor substrate; at least one inductor coil in the at least one dielectric layer with a plurality of coil windings separated by coil spaces, the at least one inductor coil lying in a plane oriented in a first direction parallel to the first surface of the semiconductor substrate, the at least one inductor coil electrically isolated from the semiconductor substrate by a portion of the at least one dielectric layer; and trenches extending into the semiconductor substrate in a second direction at an angle with respect to the first direction, the trenches underlying the inductor coil and filled with dielectric replacement material.


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