The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Dec. 14, 2018
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Stephen Daley Arthur, Glenville, NY (US);

Liangchun Yu, Schenectady, NY (US);

Nancy Cecelia Stoffel, Schenectady, NY (US);

David Richard Esler, Gloversville, NY (US);

Christopher James Kapusta, Delanson, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 29/0623 (2013.01); H01L 29/1608 (2013.01); H01L 24/37 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/05 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/491 (2013.01); H01L 2224/4911 (2013.01); H01L 2224/49175 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric field strength above the E-field suppression layer is below a dielectric strength of an adjacent material when the semiconductor device is operating at or below a maximum voltage.


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