The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Apr. 09, 2021
Applicant:
Mediatek Singapore Pte. Ltd., Singapore, SG;
Inventors:
Zhigang Duan, Singapore, SG;
Jinghao Chen, Singapore, SG;
Assignee:
MEDIATEK SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/481 (2013.01); H01L 25/18 (2013.01); H01L 28/91 (2013.01);
Abstract
A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.