The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Dec. 17, 2018
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Safran, Paris, FR;
Mikaël Colin, Grenoble, FR;
Audrey Berthelot, Saint-Ismier, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
SAFRAN, Paris, FR;
Abstract
Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.