The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Jun. 03, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jing Wang, San Jose, CA (US);
Woosung Choi, Milpitas, CA (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method for generating a model of a transistor includes: initializing hyper-parameters; training the neural network in accordance with the hyper-parameters and training data relating transistor input state values to transistor output state values to compute neural network parameters; determining whether the transistor output state values of the training data match an output of the neural network; porting the neural network to a circuit simulation code to generate a ported neural network; simulating a test circuit using the ported neural network to simulate behavior of a transistor of the test circuit to generate simulation output; determining whether a turnaround time of the generation of the simulation output is satisfactory; in response to determining that the turnaround time is unsatisfactory, re-training the neural network based on updated hyper-parameters; and in response to determining that the turnaround time is satisfactory, outputting the ported neural network as the model of the transistor.