The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Nov. 10, 2020
Huawei Technologies Canada Co., Ltd., Kanata, CA;
The Governing Councol of the University of Toronto, Toronto, CA;
Yitong Dong, Toronto, CA;
Quan Lyu, Ipswich, GB;
Giovanni Francesco Cotella, Ipswich, GB;
Peter Chun, Richmond Hill, CA;
Ya-Kun Wang, Toronto, CA;
Fanglong Yuan, Toronto, CA;
Edward Sargent, Toronto, CA;
Sjoerd Hoogland, Toronto, CA;
Makhsud Saidaminov, Victoria, CA;
HUAWEI TECHNOLOGIES CANADA CO., LTD., Kanata, CA;
THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO, Toronto, CA;
Abstract
Methods are disclosed to restore the halide ions lost in the purification (ligand removal) of photoluminescent cesium lead halide or FA lead halide perovskite quantum dots. Quantum dots thus prepared can be used to deposit solid films with high packing density featuring dots with <0.4 nm gaps therebetween, low trap density 1/40 of previously reported, high mobility 100× previously reported, high photoluminescent quantum yield exceeding 90%, high external quantum yield exceeding 20%, and increased stability under electrical current. The quantum dots are used to formulate inks suitable for ink jet printing, drop casting, spin coating, and other solution-based methods for forming emissive layers used in light producing semiconductor devices.