The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Apr. 30, 2020
Applicants:

Epistar Corporation, Hsinchu, TW;

Ireach Corporation, Hsinchu, TW;

Inventors:

Hsin-Chan Chung, Hsinchu, TW;

Shou-Lung Chen, Hsinchu, TW;

Assignees:

EPISTAR CORPORATION, Hsinchu, TW;

iReach Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/028 (2006.01); H01S 5/183 (2006.01); H01S 5/023 (2021.01); H01S 5/0225 (2021.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01);
U.S. Cl.
CPC ...
H01S 5/04257 (2019.08); H01S 5/023 (2021.01); H01S 5/028 (2013.01); H01S 5/0225 (2021.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01); H01S 5/04252 (2019.08); H01S 5/04254 (2019.08); H01S 5/183 (2013.01);
Abstract

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.


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