The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Jan. 15, 2021
Applicant:
Key Foundry Co., Ltd., Cheongju-si, KR;
Inventor:
Hyun Kwang Shin, Cheongju-si, KR;
Assignee:
KEY FOUNDRY CO., LTD., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/092 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract
A semiconductor device includes a substrate, a buried doped layer formed on the substrate, a trench gate formed on the buried doped layer, a source region formed adjacent the trench gate, an interlayer dielectric layer formed on the trench gate and the source region, a source contact plug formed to extend and connect to the source region, and a drain contact plug, extending and connecting to the buried doped layer, formed deeper than the source contact plug.
Quick Actions:
Shin, Hyun. (2022). Semiconductor device having vertical dmos and manufacturing method thereof (U.S. Patent No. 11532741). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11532741
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile