The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Mar. 01, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Yasunari Umemoto, Nagaokakyo, JP;

Daisuke Tokuda, Nagaokakyo, JP;

Tsunekazu Saimei, Nagaokakyo, JP;

Hiroaki Tokuya, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/417 (2006.01); H01L 29/732 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 29/0692 (2013.01); H01L 29/0817 (2013.01); H01L 29/20 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/6631 (2013.01); H01L 29/66234 (2013.01); H01L 29/66242 (2013.01); H01L 29/66318 (2013.01); H01L 29/732 (2013.01); H01L 29/7371 (2013.01); H01L 29/7375 (2013.01); H01L 29/7378 (2013.01); H01L 24/03 (2013.01); H01L 29/66272 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13563 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2924/00012 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10337 (2013.01); H01L 2924/10338 (2013.01); H01L 2924/13051 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/1423 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.


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