The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Sep. 21, 2020
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
In Ku Kang, Icheon-si Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11597 (2017.01); H01L 27/11587 (2017.01); G11C 15/04 (2006.01); H01L 27/11563 (2017.01); H01L 27/11585 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); G11C 15/04 (2013.01); G11C 15/046 (2013.01); H01L 27/11563 (2013.01); H01L 27/11585 (2013.01); H01L 27/11587 (2013.01);
Abstract
A semiconductor device includes: a stack structure including conductive patterns and insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; and a memory layer penetrating the stack structure, the memory layer being disposed between the channel structure and the stack structure. The memory layer includes memory parts and dummy parts, which are alternately arranged. Each of the memory parts includes a first part between the insulating layers and a second part between the dummy parts. The first part of the memory parts have ferroelectricity.