The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Jun. 24, 2020
Amazing Microelectronic Corp., New Taipei, TW;
Yu-Shu Shen, Chiayi County, TW;
Amazing Microelectronic Corp., New Taipei, TW;
Abstract
An Electrostatic Discharge protection circuit with low parasitic capacitance is provided, comprising a first bipolar junction transistor and a first ESD power clamp device. The first bipolar junction transistor is an NPN type of bipolar junction transistor, including a base and an emitter commonly connected to an I/O terminal and a collector connected with the first ESD power clamp device. The first ESD power clamp device is further connected to ground, and can be a Zener diode, PNP type, NPN type of bipolar junction transistor or the like. When a positive ESD pulse is injected, an ESD protection path is consisting of the first bipolar junction transistor and the first ESD power clamp device. When a negative ESD pulse is injected, the ESD protection path is consisting of a parasitic silicon controlled rectifier, thereby reducing parasitic capacitance effectively.