The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Dec. 07, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jozef Kudela, Morgan Hill, CA (US);

Carl A. Sorensen, Morgan Hill, CA (US);

John M. White, Hayward, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 17/06 (2006.01); H01J 37/32 (2006.01); H01F 27/08 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
H01F 17/06 (2013.01); C23C 16/455 (2013.01); C23C 16/505 (2013.01); H01F 27/08 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01F 2017/065 (2013.01); H01J 2237/0206 (2013.01); Y10T 117/10 (2015.01); Y10T 117/1004 (2015.01); Y10T 117/1008 (2015.01);
Abstract

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.


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