The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Jul. 16, 2020
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventor:
Sebastien Cremer, Sassenage, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1333 (2006.01); G02B 6/13 (2006.01); G02F 1/01 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133345 (2013.01); G02B 6/13 (2013.01); G02F 1/011 (2013.01); G02F 1/133382 (2013.01); G02F 1/0113 (2021.01); G02F 1/133357 (2021.01);
Abstract
A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.