The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Nov. 10, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kazutoyo Takano, Fukuoka, JP;
Hiroyuki Nakamura, Fukuoka, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device that can detect the cracking progress with high precision. A semiconductor device is formed using a semiconductor substrate, and includes an active region in which a semiconductor element is formed, and an edge termination region outside the active region. A crack detection structure is termed in the edge termination region of the semiconductor substrate. The crack detection structure includes: a trench formed in the semiconductor substrate and extending in a circumferential direction of the edge termination region; an inner-wall insulating film formed on an inner wall of the trench; an embedded electrode formed on the inner-wall insulating film and embedded into the trench; and a monitor electrode formed on the semiconductor substrate and connected to the embedded electrode.