The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Sep. 24, 2019
Applicant:

The Charles Stark Draper Laboratory, Inc., Cambridge, MA (US);

Inventors:

Eugene H. Cook, Acton, MA (US);

Jonathan J. Bernstein, Medfield, MA (US);

Mirela G. Bancu, Melrose, MA (US);

Marc Steven Weinberg, Dedham, MA (US);

William Sawyer, Littleton, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01C 19/5621 (2012.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01); G01C 19/5628 (2012.01);
U.S. Cl.
CPC ...
G01C 19/5621 (2013.01); B81B 3/0097 (2013.01); B81C 1/00166 (2013.01); G01C 19/5628 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/04 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); B81C 2203/035 (2013.01); B81C 2203/036 (2013.01);
Abstract

Methods for fabricating MEMS tuning fork gyroscope sensor system using silicon wafers. This provides the possibly to avoid glass. The sense plates can be formed in a device layer of a silicon on insulator (SOI) wafer or in a deposited polysilicon layer in a few examples.


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