The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Nov. 10, 2020
Applicant:

Soulbrain Co., Ltd., Gyeonggi-do, KR;

Inventors:

Jung Hun Lim, Daejeon, KR;

Jin Uk Lee, Daejeon, KR;

Jae Wan Park, Daegu, KR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); C09K 13/04 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); C09K 13/04 (2013.01);
Abstract

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.


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