The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Oct. 08, 2021
Electronics and Telecommunications Research Institute, Daejeon, KR;
Dong Hwan Shin, Daejeon, KR;
Dong Pil Chang, Daejeon, KR;
Byoung Hak Kim, Daejeon, KR;
Seong Mo Moon, Daejeon, KR;
In Bok Yom, Daejeon, KR;
Jun Han Lim, Daejeon, KR;
Jin Cheol Jeong, Daejeon, KR;
In Kwon Ju, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
Provided is a FET resistive frequency mixing device having improved RF-LO and IF-LO isolations. The frequency mixing device includes: a field effect transistor (FET), a local oscillation matching circuit connected to a gate of the FET to transfer a local oscillation signal to the gate of the FET, a gate biasing circuit connected to the gate of the FET, a radio frequency (RF) matching circuit having a first terminal connected to a drain side of the FET and a second terminal serving as a RF terminal to receive or output a RF signal, an intermediate frequency (IF) matching circuit having a first terminal connected to the drain side of the FET and a second terminal serving as an IF terminal to receive or output an IF signal, and a series resonance circuit providing a path from the drain of the FET to ground for the local oscillation signal.