The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

May. 31, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Chung-Chia Chen, Hsinchu, TW;

Yu-Hsin Lin, Zhubei, TW;

Jungmin Lee, Santa Clara, CA (US);

Takuji Kato, Yokohama, JP;

Dieter Haas, San Jose, CA (US);

Si Kyoung Kim, Gwangju-si, KR;

Ji Young Choung, Hwaseong-si, KR;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/44 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/442 (2013.01); H01L 51/0017 (2013.01); H01L 51/5206 (2013.01); H01L 2251/303 (2013.01); H01L 2251/306 (2013.01); H01L 2251/308 (2013.01);
Abstract

Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.


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