The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Dec. 20, 2019
Applicant:

Vanguard International Semiconductor Singapore Pte. Ltd., Singapore, SG;

Inventors:

You Qian, Singapore, SG;

Joan Josep Giner De Haro, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/053 (2006.01); H01L 41/047 (2006.01); H01L 41/08 (2006.01); H04R 17/02 (2006.01); H01L 41/297 (2013.01);
U.S. Cl.
CPC ...
H01L 41/053 (2013.01); H01L 41/0472 (2013.01); H01L 41/0805 (2013.01); H01L 41/297 (2013.01); H04R 17/02 (2013.01);
Abstract

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.


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