The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Apr. 05, 2019
Applicant:

Suzhou Lekin Semiconductor Co., Ltd., Taicang, CN;

Inventors:

Youn Joon Sung, Seoul, KR;

Min Sung Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/387 (2013.01);
Abstract

An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.


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