The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
May. 10, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Jeehwan Kim, Cambridge, MA (US);
David B. Mitzi, Mahopac, NY (US);
Byungha Shin, White Plains, NY (US);
Teodor K. Todorov, Yorktown Heights, NY (US);
Mark T. Winkler, New York, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0749 (2012.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/032 (2006.01); H01L 31/072 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0749 (2013.01); H01L 31/02167 (2013.01); H01L 31/0326 (2013.01); H01L 31/072 (2013.01); H01L 31/18 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01);
Abstract
A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.