The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Apr. 27, 2018
Applicants:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

The Regents of the University of California, a California Corporation, Oakland, CA (US);

Inventors:

Nikhil Jain, Sunnyvale, CA (US);

Myles Aaron Steiner, Denver, CO (US);

John Franz Geisz, Wheat Ridge, CO (US);

Emmett Edward Perl, Boulder, CO (US);

Ryan Matthew France, Golden, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/036 (2006.01); H01L 31/0352 (2006.01); H01L 31/0735 (2012.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/036 (2013.01); H01L 31/035209 (2013.01); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01); H01L 31/0735 (2013.01); Y02E 10/544 (2013.01);
Abstract

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.


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