The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jul. 15, 2015
Applicant:
Fundació Institut DE Ciències Fotôniques, Barcelona, ES;
Inventors:
Gerasimos Konstantatos, Barcelona, ES;
Frank Koppens, Barcelona, ES;
Dominik Kufer, Barcelona, ES;
Ivan Nikitskiy, Barcelona, ES;
Assignee:
FUNDACIÓ INSTITUT DE CIÈNCIES FOTÔNIQUES, Castelldefels, ES;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/101 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); H01L 31/101 (2013.01); H01L 31/18 (2013.01);
Abstract
An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (), a dielectric layer (), a transport layer, and a photosensitizing layer (). The transport layer comprises at least a 2-dimensional semiconductor layer (), such as MoS, and the photosensitizing layer () comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.