The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 01, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Qintao Zhang, Mt Kisco, NY (US);
Samphy Hong, Saratoga Springs, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming an oxide layer over the device structure including within each of the plurality of trenches and over a top surface of the device structure, and implanting a first portion of the oxide layer using an ion implant delivered to the device structure at a non-zero angle of inclination relative to a perpendicular extending from a top surface of the device structure. The method may further include removing the oxide layer from the top surface of the device structure and from a sidewall of each of the plurality of trenches, wherein a second portion of the oxide layer remains along a bottom of each of the plurality of trenches.