The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jul. 07, 2020
Applicant:
Diodes Incorporated, Plano, TX (US);
Inventors:
Kolins Chao, Zhubei, TW;
John Huang, New Taipei, TW;
Assignee:
Diodes Incorporated, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/417 (2013.01); H01L 24/13 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/8725 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01);
Abstract
A semiconductor Schottky rectifier built in an epitaxial semiconductor layer over a substrate has an anode structure and a cathode structure extending from the surface of the epitaxial layer. The cathode contact structure has a trench structure near the epi-layer and a vertical sidewall surface covered with a gate oxide layer. The cathode structure further comprises a polysilicon element adjacent to the gate oxide layer.