The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 29, 2021
Applicants:
Kai Fu, Tempe, AZ (US);
Houqiang Fu, Tempe, AZ (US);
Yuji Zhao, Chandler, AZ (US);
Inventors:
Assignee:
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); G11C 13/0002 (2013.01); H01L 29/2003 (2013.01); H01L 29/66204 (2013.01); H01L 29/861 (2013.01); H01L 45/12 (2013.01); H01L 45/1608 (2013.01);
Abstract
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.