The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jan. 11, 2021
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Pin-Chieh Huang, Hsinchu County, TW;
Jui-Hung Hung, Hsinchu, TW;
Yi-Chen Yeh, Chiayi, TW;
Cheng-Han Yang, Hsinchu, TW;
Wen-Hao Huang, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate.