The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Sep. 09, 2020
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Wen-Hsin Lin, Jhubei, TW;
Yeh-Jen Huang, Hsinchu, TW;
Chun-Jung Chiu, Tainan, TW;
Jian-Hsing Lee, Puzih, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 29/0653 (2013.01); H01L 29/66393 (2013.01); H01L 29/7436 (2013.01);
Abstract
An electrostatic discharge protection device including a substrate, a first PNP element, a second PNP element, and an isolation region is provided. The substrate has a P-type conductivity. The first and second PNP elements are formed in the substrate. The isolation region isolates the first and second PNP elements.