The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Nov. 30, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tzu-Ching Tsai, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/64 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 23/48 (2013.01);
Abstract

The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a first metal plug, a second metal plug, a third metal plug, and a fourth metal plug over a semiconductor substrate; forming an energy removable liner covering the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug; performing an etching process to remove a portion of the energy removable layer from the substrate, while remaining an energy removable block between the first metal plug and the second metal plug in the cell region; forming a dielectric layer covering the energy removable block and the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug; performing a thermal treating process to transform the energy removable layer into a first air gap structure including a first air gap enclosed by liner layer.


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