The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 12, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jinbae Bang, Anyang-si, KR;
Doohyun Kim, Hwaseong-si, KR;
Minseok Kim, Hwaseong-si, KR;
Jisu Kim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01); G11C 7/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 7/106 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 16/0483 (2013.01); G11C 2211/5642 (2013.01);
Abstract
Disclosed are a nonvolatile memory device and a read method of the nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a row decoder circuit, and a page buffer circuit including first latches and second latches. The page buffer circuit respectively latches first sensing values, which are based on data stored in adjacent memory cells, at the first latches and respectively latches second sensing values, which are based on data stored in selected memory cells, at the second latches at least two times.