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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11527261 B1

PDFFull Text
Date of Patent:
Dec. 13, 2022

Filed:

Feb. 22, 2021

Storage element

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kazutaka Yamane, Kanagawa, JP;

Masanori Hosomi, Tokyo, JP;

Hiroyuki Ohmori, Kanagawa, JP;

Kazuhiro Bessho, Kanagawa, JP;

Yutaka Higo, Kanagawa, JP;

Tetsuya Asayama, Tokyo, JP;

Hiroyuki Uchida, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

K&L Gates LLP

Primary Examiner:

Marc Anthony Armand

Int. Cl.
CPC ...
G11B 5/31 (2006.01); H01F 10/32 (2006.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11B 5/127 (2006.01); H01L 23/528 (2006.01); H01L 27/22 (2006.01); H01F 10/12 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
G11B 5/3146 (2013.01); G11B 5/1278 (2013.01); G11B 5/3906 (2013.01); G11B 5/3909 (2013.01); G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01L 23/528 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); B82Y 25/00 (2013.01); H01F 10/123 (2013.01); H01F 10/329 (2013.01); H01L 27/228 (2013.01);
Abstract

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

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