The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
May. 31, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Young Gu Jin, Suwon-si, KR;
Young Chan Kim, Seongnam-si, KR;
Tae Sub Jung, Hwaseong-si, KR;
Yong Hun Kwon, Hwaseong-si, KR;
Sung Young Seo, Bucheon-si, KR;
Moo Sup Lim, Yongin-si, KR;
Sung Ho Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.