The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Nov. 06, 2019
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Young Chang Joo, Seoul, KR;
Won Hyo Joo, Seoul, KR;
Dae Hyun Nam, Gyeongsangnam-do, KR;
Ji Yong Kim, Seoul, KR;
Assignee:
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/10 (2006.01); C25B 1/02 (2006.01); C30B 29/46 (2006.01); C25B 11/091 (2021.01);
U.S. Cl.
CPC ...
C30B 1/10 (2013.01); C25B 1/02 (2013.01); C25B 11/091 (2021.01); C30B 29/46 (2013.01);
Abstract
Provided is a method of manufacturing MoShaving a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoSto the 1T crystal structure by reacting MoShaving the 2H crystal structure with CO gas. The phase transition includes annealing the MoShaving the 2H crystal structure in an atmosphere including CO gas.