The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 28, 2019
Applicant:
Najing Technology Corporation Limited, Zhejiang, CN;
Inventor:
Jianhai Zhou, Zhejiang, CN;
Assignee:
Najing Technology Corporation Limited, Zhejiang, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/88 (2006.01); C01B 19/00 (2006.01); C01G 9/08 (2006.01); C01G 11/00 (2006.01); C09K 11/56 (2006.01); H01L 33/50 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); C01B 19/007 (2013.01); C01G 9/08 (2013.01); C01G 11/006 (2013.01); C09K 11/565 (2013.01); H01L 33/502 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2004/84 (2013.01); C01P 2006/60 (2013.01);
Abstract
The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.