The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Apr. 26, 2018
Applicant:
Guangzhou Cas Lamvac Biotech Co., Ltd, Guangzhou, CN;
Inventors:
Xingxiang Liang, Guangzhou, CN;
Jianhua Su, Guangzhou, CN;
Meiling Wang, Guangzhou, CN;
Ying Tong, Guangzhou, CN;
Yongchao Yao, Guangzhou, CN;
Li Qin, Guangzhou, CN;
Xiaoping Chen, Guangzhou, CN;
Assignee:
GUANGZHOU CAS LAMVAC BIOTECH CO., LTD, Guangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C12P 21/06 (2006.01); A61K 39/015 (2006.01); A61P 33/06 (2006.01); C07K 14/445 (2006.01); C12N 1/36 (2006.01); C12N 15/79 (2006.01); A61K 39/00 (2006.01);
U.S. Cl.
CPC ...
A61K 39/015 (2013.01); A61P 33/06 (2018.01); C07K 14/445 (2013.01); C12N 1/36 (2013.01); C12N 15/79 (2013.01); A61K 2039/522 (2013.01);
Abstract
Disclosed are an attenuation system and the use thereof for attenuating plasmodia, specifically the use of an EF1g gene for attenuating plasmodia. The attenuation system regulates the expression or degradation of the EF1g gene by using a regulatory system, thereby controlling the growth of plasmodia and achieving the attenuation of plasmodia.