The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jan. 10, 2022
Solomon Systech (Shenzhen) Limited, Shenzhen, CN;
Pak-Kong Dunn, Hong Kong, CN;
Wen-Chi Wu, Taiwan, TW;
Po Yen Lin, Hong Kong, CN;
Hai Bin You, Shenzhen, CN;
Solomon Systech (Shenzhen) Limited, Shenzhen, CN;
Abstract
A level shifter circuit for translating input signal to output signal is disclosed. The level shifter includes an input stage and a latch stage. The latch stage comprises at least a transistor characterized in a substantially matched transconductance with the input stage for preventing a discrete realization of a voltage clamp circuit. The transistor is a semiconductor device including a source region having a source doping region and a drain region having a first doping region and a second doping region. The first doping region is doped with a first conductivity impurity. The second doping region is disposed around the first doping region so as to surround the first doping region, and is doped with a second conductivity impurity. The second doping region has a higher on-resistance than the first doping region, thereby a high resistive series path is created by the second doping region to mimic an embedded resistor.