The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Aug. 13, 2021
Raytheon Company, Waltham, MA (US);
Andrew D. Gamalski, Tucson, AZ (US);
Miroslav Micovic, Marana, AZ (US);
Katherine J. Herrick, Tucson, AZ (US);
Raytheon Company, Waltham, MA (US);
Abstract
A dual-band MMIC power amplifier and method of operation to amplify frequencies in different RF bands while only requiring input drive signals at frequencies fand fin a narrow RF input band. This allows for the use of a conventional narrowband RF IC to drive the MMIC and does not require additional circuitry (e.g., a LO) on the MMIC power amplifier. The matching network of the last amplification stage is modified to pass f(or a harmonic thereof), reflect f, pass a Pharmonic of fwhere P is 2 or 3 and to reflect any unused 1, 2or 3order harmonics of for fback into the MMIC. In response to an input signal at f, the MMIC power amplifier amplifies and outputs a signal at f(or a harmonic thereof). In response to an input signal at fat sufficient RF power, the last amplification stage operates in compression such that the MMIC power amplifier generates the harmonics, selects the Pharmonic and outputs an amplified RF signal at P*f.