The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Dec. 21, 2018
Applicants:

Lg Display Co., Ltd., Seoul, KR;

Lg Chem, Ltd., Seoul, KR;

Inventors:

Seunghee Yoon, Seoul, KR;

Jungkeun Kim, Seoul, KR;

Jicheol Shin, Seoul, KR;

Jeongdae Seo, Incheon, KR;

Seonkeun Yoo, Gunpo-si, KR;

Joon Yoon, Daejeon, KR;

Wan Pyo Hong, Daejeon, KR;

Joo Yong Yoon, Daejeon, KR;

Assignees:

LG DISPLAY CO., LTD., Seoul, KR;

LG CHEM, LTD., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); H01L 27/3209 (2013.01); H01L 51/0051 (2013.01); H01L 51/0052 (2013.01); H01L 51/0054 (2013.01); H01L 51/0067 (2013.01); H01L 51/0073 (2013.01); H01L 51/0074 (2013.01); H01L 51/5004 (2013.01); H01L 51/504 (2013.01); H01L 51/5044 (2013.01); H01L 51/5278 (2013.01); H01L 51/0094 (2013.01); H01L 51/5072 (2013.01);
Abstract

Disclosed herein are an organic light emitting diode including: at least two light emitting stacks interposed between an anode and a cathode and including at least one light emitting material layer; and a charge generation layer interposed between the light emitting stacks. The charge generation layer includes an N-type charge generation layer and a P-type charge generation layer, wherein the N-type charge generation layer and the P-type charge generation layer are stacked in such direction for the N-type charge generation layer to face the anode and for the P-type charge generation layer to face the cathode. The N-type charge generation layer includes a compound represented by Formula 1. The P-type charge generation layer includes any one selected from the group consisting of a compound represented by Formula 2, a compound represented by Formula 3, and a combination thereof. The material for N-type charge generation layers and the material for P-type charge generation layers of the disclosure can secure low driving voltage and long lifespan of an organic light emitting diode when used in the organic light emitting diode. Compounds of Formulae 1, 2, and 3 are as defined herein.


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