The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Jan. 30, 2020
Applicants:

Lextar Electronics Corporation, Hsinchu, TW;

Ultra Display Technology Co., Ltd., Taipei, TW;

Inventors:

Shiou-Yi Kuo, Hsinchu, TW;

Jian-Chin Liang, Hsinchu, TW;

Shen-De Chen, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/0093 (2020.05); H01L 2933/0066 (2013.01);
Abstract

A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.


Find Patent Forward Citations

Kuo, Shiou-Yi. (2022). Light emitting diode and manufacturing method thereof (U.S. Patent No. 11522112). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11522112

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