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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11522107 B1

PDFFull Text
Date of Patent:
Dec. 06, 2022

Filed:

Jun. 01, 2020

Light emitting diode and fabrication method thereof

Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Cheng Meng, Xiamen, CN;

Yuehua Jia, Xiamen, CN;

Jing Wang, Xiamen, CN;

Chun-Yi Wu, Xiamen, CN;

Ching-Shan Tao, Xiamen, CN;

Duxiang Wang, Xiamen, CN;

Assignee:

XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda Jefferson

Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0093 (2020.05); H01L 33/38 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/30 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Find Patent Forward Citations

Meng, Cheng. (2022). Light emitting diode and fabrication method thereof (U.S. Patent No. 11522107). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11522107

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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