The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Sep. 18, 2020
Applicant:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01);
Abstract
An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount εof the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount εof the first AlN layer in the a-axis direction.