The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Dec. 30, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02532 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0847 (2013.01); H01L 29/4232 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01);
Abstract
Disclosed is a semiconductor device comprising an active region that protrudes upwardly from a substrate, a plurality of channel patterns that are spaced apart from each other in a first direction on the active region, and a gate electrode that extends in the first direction on the active region and covers the plurality of channel patterns. Each of the plurality of channel patterns includes a plurality of semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the active region. The gate electrode covers the top surface of the active region between the plurality of channel patterns.