The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Oct. 08, 2018
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd, Wuhan, CN;
Inventor:
Chen Chen, Wuhan, CN;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 21/2855 (2013.01); H01L 21/31116 (2013.01); H01L 21/32139 (2013.01);
Abstract
A manufacturing method of a low temperature poly-silicon (LTPS) array substrate is described. The LTPS array substrate includes a metal light-shielding layer, a buffer layer, a polycrystalline silicon layer, a gate insulating and interlayer insulating layer, a gate line layer, and a source and drain electrode layer. The method adopts a one-time chemical vapor deposition process to form a gate insulator and interlayer insulating layer. A gate line trench is formed in the gate insulating layer and the interlayer insulating layer, thereby reducing the thickness of the LTPS array substrate film layer and the process steps.