The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Feb. 17, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Tsuyoshi Kachi, Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, a fourth semiconductor layer on the third semiconductor layer, a second electrode connected to the third and fourth semiconductor layers, a gate electrode extending from the fourth toward the second semiconductor layer next to the third semiconductor layer, a field plate electrode extending in a direction from the fourth toward the second semiconductor layer next to the second semiconductor layer, and a first insulating film between the field plate electrode and the second semiconductor layer and having a lower end further from the field plate electrode than the first semiconductor layer; the first, second, and fourth semiconductor layers are of a first conductivity type; and the third semiconductor layer is of a second conductivity type.