The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Nov. 30, 2021
Applicant:

Ideal Power Inc., Austin, TX (US);

Inventors:

Alireza Mojab, Austin, TX (US);

Daniel Brdar, Driftwood, TX (US);

Ruiyang Yu, Austin, TX (US);

Assignee:

IDEAL POWER INC., Austin, TX (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H03K 17/082 (2006.01); H01L 29/747 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 29/732 (2013.01); H01L 29/747 (2013.01); H03K 17/0826 (2013.01);
Abstract

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.


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