The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Dec. 28, 2020
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yoshinori Oda, Matsumoto, JP;

Yoshinori Uezato, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/13 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H05K 1/03 (2006.01); H05K 1/05 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 23/13 (2013.01); H01L 23/15 (2013.01); H01L 23/3735 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H05K 1/0306 (2013.01); H05K 1/053 (2013.01); H05K 2201/09145 (2013.01);
Abstract

A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T, Tand T. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance≤(0.9×T/first distance), and/or (1.1×T/first distance)≤depression formation distance<second distance.


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