The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Dec. 28, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Gi Gwan Park, Hwaseong-si, KR;
Jung Gun You, Ansan-si, KR;
Ki Il Kim, Suwon-si, KR;
Sug Hyun Sung, Yongin-si, KR;
Myung Yoon Um, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.