The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Dec. 19, 2018
Applicant:
South China Normal University, Guangdong, CN;
Inventors:
Richard Notzel, Guangdong, CN;
Peng Wang, Guangdong, CN;
Stefano Sanguinetti, Milan, IT;
Guofu Zhou, Guangdong, CN;
Assignee:
South China Normal University, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02293 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 21/02631 (2013.01);
Abstract
Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer () on a Si substrate (); and 2) growing a second InGaN-based layer on the first InGaN-based layer ().