The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Jun. 13, 2019
Applicants:

Samsung Display Co., Ltd, Yongin-si, KR;

Yonsei University, University-industry Foundation (Uif), Seoul, KR;

Inventors:

Jun Hyung Lim, Seoul, KR;

Hyung Jun Kim, Seoul, KR;

Sun Hee Lee, Seoul, KR;

Seung Gi Seo, Seoul, KR;

Whang Je Woo, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 29/4908 (2013.01); H01L 29/66045 (2013.01); H01L 29/66969 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/786 (2013.01); H01L 29/78648 (2013.01);
Abstract

A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.


Find Patent Forward Citations

Lim, Jun. (2022). Method for manufacturing semiconductor device and semiconductor device using the same (U.S. Patent No. 11521850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11521850

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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