The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

May. 05, 2021
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Gil Bok Choi, Icheon-si Gyeonggi-do, KR;

Dae Hwan Yun, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/32 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01);
Abstract

A memory device, and a method of operating the same, includes a memory cell array coupled to a plurality of word lines, wherein each word line is coupled to a plurality of memory cells. The memory device also includes a peripheral circuit configured to perform a sensing operation of sensing selected memory cells coupled to a selected word line selected from among the plurality of word lines. The memory device further includes control logic configured to control the peripheral circuit apply a turn-on voltage to a block word line coupled to the selected word line when the sensing operation is terminated and when potentials of the plurality of word lines are increased due to a recovery operation for channels of the plurality of memory cells after the plurality of word lines have been discharged.


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